ps2653 ps2653l2 ps2654 ps2654l2 long creepage type high isolation voltage 6 pin optocoupler description ps2653 and ps2654 are optically coupled isolators contain- ing a gaas light emitting diode and an npn silicon darlington- connected phototransistor in a plastic dip (dual in-line package). ps2653 has a base pin and ps2654 has no base pin. creepage distance and clearance of leads are over 8 millimeters. ps2653l2 and ps2654l2 are surface mount type. applications interface circuit for various instrumentations and control equipment. ? ac line/digital logic ? digital logic interface ? twisted pair line receiver ? telephone/telegraph line receiver ? high frequency power supply feedback control ? relay contact monitor ? power supply monitor features ? high isolation voltage bv: 5 k v r.m.s. min ? long creepage and clearance distance 8 mm min ? high collector to emitter voltage v ceo = 40 v min ? high speed switching t r , t f = 100 m s typ ? high current transfer ratio ctr: 2000% typ ? 6 pin dual in-line package ? taping is available 1. ctr rank kd : 2300 to (%) ld : 700 to 3400 (%) md: 200 to 1000 (%) part number ps2653, ps2653l2, ps2654, ps2654l2 symbols parameters units min typ max v f forward voltage, i f = 10 ma v 1.1 1.4 i r reverse current, v r = 5 v m a5 c junction capacitance, v = 0, f = 1.0 mhz pf 30 i ceo collector to emitter dark current, v ce = 40 v, i f = 0 na 400 bv ceo collector to emitter breakdown voltage, i c = 1 ma, i b = 0 v 40 bv eco emitter to collector breakdown voltage, i e = 100 m a, i b = 0 v 6 ctr current transfer ratio 1 , i f = 1 ma, v ce = 2 v % 200 2000 v ce(sat) collector saturation voltage, i f = 1 ma, i c = 2 ma v 1.0 r 1-2 isolation resistance, v in-out = 1.0 k v w 10 11 c 1-2 isolation capacitance, v = 0, f = 1.0 mhz pf 0.6 t r rise time 2 , v cc = 10 v, i c = 10 ma m s3 t f fall time 2 , v cc = 10 v, i c = 10 ma m s5 electrical characteristics (t a = 25 c) 2. test circuit for switching time transistor diode coupled pulse input v cc v out r l = 100 w 50 w 1 2 5 4 pw = 100 m s
duty cycle = 1/10 () i f 654 123 654 123 ps2653 ps2653 ps2654 ps2654 pulse input v cc v out r l = 100 w 50 w 1 2 5 4 pw = 100 m s
duty cycle = 1/10 () i f 6 california eastern laboratories
ps2653, ps2653l2, ps2654, ps2654l2 absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings diode v r reverse voltage v 6 i f forward current (dc) ma 80 p d power dissipation mw 150 i f (peak) peak forward current a 1 pw = 100 m s, duty cycle 1% transistor v ceo collector to emitter voltage v 40 v eco emitter to collector voltage v 6 i c collector current ma 200 p c power dissipation mw 200 coupled bv isolation voltage 2 v r.m.s. 5000 t stg storage temperature c -55 to +150 t op operating temperature c -55 to +100 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. ac voltage for 1 minute at t a = 25 c, rh = 60 % between input (pin no. 1, 2, 3 common) and output (pin no. 4, 5, 6 common). outline dimensions (units in mm) ps2653, ps2654 ps2653l2, ps2654l2 10.16 max. 65 4 123 3.8 max 0.50 0.10 0.25 m 2.8 max 4.25 max 0.35 1.34 2.54 2.54 max 10.16 7.62 6.5 0 to 15 ?
10.16 max. 64 13 11.8 0.4 10.16 7.62 6.5 0.9 0.25 3.8 max. 1.34 0.10 2.54 1.27 max. 0.25 m 4.25 max. 0.05 to 0.2 pin connection (top view) ps2653, ps2653l2 ps2654, ps2654l2 654 123 1. anode 2. cathode 3. nc 4. emitter 5. collector 6. nc 1. anode 2. cathode 3. nc 4. emitter 5. collector 6. base 654 123
typical performance curves (t a = 25 c) diode power dissipation vs. ambient temperature diode power dissipation, p d (mw) ambient temperature, t a ( c) ambient temperature, t a ( c) forward current, i f (ma) collector to emitter dark current vs. ambient temperature forward voltage, v f (v) collector to emitter dark current, i ceo (na) forward current vs. forward voltage transistor power dissipation, p c (mw) collector saturation voltage, v ce(sat) (v) collector current, i c (ma) collector current vs. collector saturation voltage collector to emitter voltage, v ce (v) collector current, i c (ma) ambient temperature, t a ( c) collector current vs. collector to emitter voltage 200 150 100 50 0 25 50 75 100 200 150 100 50 0 25 50 75 100 transistor power dissipation vs. ambient temperature t a = 100 ?c
75 ?c
50 ?c 25 ?c
0 ?c
-25 ?c
-55 ?c
100 10 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 5 ma 2 ma 1 ma i f = 0.5 ma 120 100 80 60 40 0 24 140 20 6810 50000 10000 1000 100 10 1 -60 -40 -20 0 20 40 60 80 100 40 v
24 v
10 v
5 v
v ce = 2 v 1000 100 10 1 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 10 ma 5 ma 1 ma 0.5 ma 0.2 ma i f = 0.1 ma ps2653, ps2653l2, ps2654, ps2654l2
ps2653, ps2653l2, ps2654, ps2654l2 typical performance curves (t a = 25 c) normalized output current vs. ambient temperature normalized output current, d ctr ambient temperature, t a ( c) normalized to 1.0
at t a = 25 ?c
i f = 1 ma, v ce = 2 v 1.2 1.0 0.8 0.6 0.4 0.2 0 -55 -25 0 25 50 75 100 current transfer ratio (ctr) vs. forward current current transfer ratio, ctr (%) forward current, i f (ma ) 5000 4000 3000 2000 1000 0 0.05 0.1 1 10 550 v ce = 2 v sample a
b
c
d switching time, t ( m s) load resistance, r l ( w ) switching time vs. load resistance v cc = 10 v
i c = 2 ma t off t on t f t r 2000 1000 500 100 50 10 50 100 500 1 k 2 k voltage gain, a v (db) frequency, f (khz) frequency response i f = 1 ma
v ce = 2 v
t a = 25 ?c r l = 100 w 0 -5 -10 -15 -20 0.2 0.5 1 2 5 10 20 50 100 200 time (h r ) normalized, d ctr ctr degradation ctr test condition
i f = 1 ma 0.8 0.6 0.4 0.2 0 10 10 2 1.2 1.0 10 3 10 4 10 5 10 6 t a = 25 ?c t a = 60 ?c exclusive north american agent for rf, microwave & optoelectronic semiconductors
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